STGWT40H65FB
IGBT 650V 80A 283W TO3P-3LManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWT40H65FB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This device features a 650 V collector-emitter breakdown voltage and an 80 A continuous collector current (Ic), with a pulsed collector current (Icm) capability of 160 A. The maximum power dissipation is rated at 283 W. Key switching characteristics include a gate charge of 210 nC and typical on/off switching times of 40 ns/142 ns at 25°C under a 400 V, 40 A, 5 Ohm load with 15 V gate drive. The on-state voltage (Vce(on)) is a maximum of 2.3 V at 15 V gate drive and 40 A collector current. Optimized for efficient switching, its switching energy is specified at 498 mJ (on) and 363 mJ (off) under test conditions. The STGWT40H65FB is housed in a TO-3P-3, SC-65-3 package, suitable for through-hole mounting. This component finds application in power factor correction, industrial motor drives, and uninterruptible power supplies. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 40ns/142ns |
| Switching Energy | 498mJ (on), 363mJ (off) |
| Test Condition | 400V, 40A, 5Ohm, 15V |
| Gate Charge | 210 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 283 W |
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