STGWT40H60DLFB
IGBT 600V 80A 283W TO3P-3LManufacturer: STMicroelectronics
Categories: Single IGBTs
Quality Control: Learn More
STMicroelectronics STGWT40H60DLFB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 80A, with a pulsed capability of 160A. The STGWT40H60DLFB features a low on-state voltage of 2V at 15V gate-emitter voltage and 40A collector current, with a typical turn-off delay of 142ns at 25°C. With a maximum power dissipation of 283W and a junction temperature range of -55°C to 175°C, this IGBT is suitable for demanding industrial and automotive power conversion systems. The device is provided in a TO-3P-3 (SC-65-3) package for through-hole mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/142ns |
| Switching Energy | 363µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 210 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 283 W |
Request a Quote
Clients Also Buy
STGP19NC60H
IGBT 600V 40A 130W TO220
STGP30NC60K
IGBT 600V 60A 185W TO220AB
STGW15H120DF2
IGBT H-SERIES 1200V 15A TO-247
