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STGWT38IH130D

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STGWT38IH130D

IGBT 1300V 63A 250W TO3P

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics PowerMESH™ IGBT STGWT38IH130D is a 1300V, 63A insulated gate bipolar transistor for demanding power applications. This device features a maximum collector power dissipation of 250W and a pulsed collector current of 125A. The Vce(on) is rated at 2.8V maximum at 15V gate-emitter voltage and 20A collector current. With a low output capacitance and a switching energy of 3.4mJ (off) under test conditions of 960V, 20A, 10 Ohm, and 15V, this IGBT is suitable for high-efficiency power conversion. It operates across a broad temperature range from -55°C to 150°C. The STGWT38IH130D is housed in a TO-3P-3 Full Pack package, designed for through-hole mounting, and is supplied in tubes. This component finds application in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
Supplier Device PackageTO-3P
IGBT Type-
Td (on/off) @ 25°C-/284ns
Switching Energy3.4mJ (off)
Test Condition960V, 20A, 10Ohm, 15V
Gate Charge127 nC
Current - Collector (Ic) (Max)63 A
Voltage - Collector Emitter Breakdown (Max)1300 V
Current - Collector Pulsed (Icm)125 A
Power - Max250 W

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