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STGWT30V60F

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STGWT30V60F

IGBT 600V 60A 260W TO3PF

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics' STGWT30V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 120A. The device exhibits a maximum on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 30A collector current. With a power dissipation capability of 260W and a junction temperature range of -55°C to 175°C, it is suitable for demanding power conversion and control systems. Switching characteristics include typical values of 45ns turn-on and 189ns turn-off time at 400V and 30A, with associated switching energies of 383µJ (on) and 233µJ (off). The STGWT30V60F is provided in a TO-3P-3 (SC-65-3) through-hole package, commonly utilized in industrial power supplies, motor control, and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 30A
Supplier Device PackageTO-3P
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C45ns/189ns
Switching Energy383µJ (on), 233µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge163 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)120 A
Power - Max260 W

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