STGWT30V60F
IGBT 600V 60A 260W TO3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics' STGWT30V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 120A. The device exhibits a maximum on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 30A collector current. With a power dissipation capability of 260W and a junction temperature range of -55°C to 175°C, it is suitable for demanding power conversion and control systems. Switching characteristics include typical values of 45ns turn-on and 189ns turn-off time at 400V and 30A, with associated switching energies of 383µJ (on) and 233µJ (off). The STGWT30V60F is provided in a TO-3P-3 (SC-65-3) through-hole package, commonly utilized in industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/189ns |
| Switching Energy | 383µJ (on), 233µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 163 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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