STGWT30V60DF
IGBT 600V 60A 258W TO3P-3Manufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGWT30V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 120A. The STGWT30V60DF offers a maximum power dissipation of 258W and a low on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 30A collector current. Its switching characteristics include a reverse recovery time (trr) of 53ns and switching energies of 383µJ (turn-on) and 233µJ (turn-off) at 400V, 30A, 10 Ohm, and 15V. The device has a gate charge of 163 nC and operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-3P-3 (SC-65-3) through-hole configuration, this IGBT is suitable for demanding applications in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 53 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/189ns |
| Switching Energy | 383µJ (on), 233µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 163 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 258 W |
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