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STGWT30V60DF

IGBT 600V 60A 258W TO3P-3

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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The STMicroelectronics STGWT30V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed capability of 120A. The STGWT30V60DF offers a maximum power dissipation of 258W and a low on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 30A collector current. Its switching characteristics include a reverse recovery time (trr) of 53ns and switching energies of 383µJ (turn-on) and 233µJ (turn-off) at 400V, 30A, 10 Ohm, and 15V. The device has a gate charge of 163 nC and operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-3P-3 (SC-65-3) through-hole configuration, this IGBT is suitable for demanding applications in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)53 ns
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 30A
Supplier Device PackageTO-3P
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C45ns/189ns
Switching Energy383µJ (on), 233µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge163 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)120 A
Power - Max258 W

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