STGWT30H65FB
IGBT 650V 30A 260W TO3PLManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWT30H65FB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current of 30 A, with a pulsed capability of up to 120 A. The device dissipates a maximum of 260 W and exhibits a collector-emitter saturation voltage (Vce(on)) of 2 V at 15 V gate-source voltage and 30 A collector current. Switching characteristics include a gate charge of 149 nC and typical turn-on and turn-off delays of 37 ns and 146 ns respectively, at 25°C. This IGBT is housed in a TO-3P-3, SC-65-3 package, suitable for through-hole mounting. Applications can be found in power factor correction, uninterruptible power supplies (UPS), and industrial motor drives. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 37ns/146ns |
| Switching Energy | 151µJ (on), 293µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 149 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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