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STGWT30H65FB

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STGWT30H65FB

IGBT 650V 30A 260W TO3PL

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics STGWT30H65FB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current of 30 A, with a pulsed capability of up to 120 A. The device dissipates a maximum of 260 W and exhibits a collector-emitter saturation voltage (Vce(on)) of 2 V at 15 V gate-source voltage and 30 A collector current. Switching characteristics include a gate charge of 149 nC and typical turn-on and turn-off delays of 37 ns and 146 ns respectively, at 25°C. This IGBT is housed in a TO-3P-3, SC-65-3 package, suitable for through-hole mounting. Applications can be found in power factor correction, uninterruptible power supplies (UPS), and industrial motor drives. The operating junction temperature range is -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Supplier Device PackageTO-3P
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C37ns/146ns
Switching Energy151µJ (on), 293µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge149 nC
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)120 A
Power - Max260 W

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