STGWT20V60DF
IGBT 600V 40A 167W TO3P-3Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWT20V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 40A, with a pulsed capability of 80A. The device offers a maximum power dissipation of 167W and a low on-state voltage (Vce(on)) of 2.2V at 15V gate-emitter voltage and 20A collector current. Key switching characteristics include a gate charge of 116 nC and switching energies of 200µJ (on) and 130µJ (off) under specified test conditions (400V, 20A, 15V). Operating across a temperature range of -55°C to 175°C, the STGWT20V60DF is supplied in a TO-3P through-hole package. This device finds application in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 40 ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 38ns/149ns |
| Switching Energy | 200µJ (on), 130µJ (off) |
| Test Condition | 400V, 20A, 15V |
| Gate Charge | 116 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 167 W |
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