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STGWT20HP65FB

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STGWT20HP65FB

IGBT

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics' STGWT20HP65FB is a high-performance Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) from the HB series. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 80 A. Designed for demanding applications, it offers a maximum power dissipation of 168 W and a low on-state voltage (Vce(on)) of 2 V at 15 V gate-emitter voltage and 20 A collector current. The device exhibits a gate charge of 120 nC and a typical switching energy (Eoff) of 170 µJ under specified test conditions (400 V, 20 A, 10 O, 15 V). With a reverse recovery time of 140 ns and a thermal resistance suitable for high-power handling, this IGBT is well-suited for use in power factor correction, motor drives, and power supply applications. The STGWT20HP65FB is supplied in a TO-3P package, facilitating through-hole mounting and operating across a temperature range of -55°C to 175°C.

Additional Information

Series: HBRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)140 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 20A
Supplier Device PackageTO-3P
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C-/139ns
Switching Energy170µJ (off)
Test Condition400V, 20A, 10Ohm, 15V
Gate Charge120 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)80 A
Power - Max168 W

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