STGWT20HP65FB
IGBTManufacturer: STMicroelectronics
Categories: Single IGBTs
Quality Control: Learn More
STMicroelectronics' STGWT20HP65FB is a high-performance Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) from the HB series. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 80 A. Designed for demanding applications, it offers a maximum power dissipation of 168 W and a low on-state voltage (Vce(on)) of 2 V at 15 V gate-emitter voltage and 20 A collector current. The device exhibits a gate charge of 120 nC and a typical switching energy (Eoff) of 170 µJ under specified test conditions (400 V, 20 A, 10 O, 15 V). With a reverse recovery time of 140 ns and a thermal resistance suitable for high-power handling, this IGBT is well-suited for use in power factor correction, motor drives, and power supply applications. The STGWT20HP65FB is supplied in a TO-3P package, facilitating through-hole mounting and operating across a temperature range of -55°C to 175°C.
Additional Information
Series: HBRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 140 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/139ns |
| Switching Energy | 170µJ (off) |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 168 W |
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