STGWT20H60DF
IGBT 600V 40A 167W TO3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWT20H60DF is a 600V Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device offers a continuous collector current of 40A, with a pulsed capability of 80A (Icm). Its low on-state voltage (Vce(on)) of 2V at 15V Vge and 20A Ic, coupled with switching energies of 209µJ (on) and 261µJ (off) at 400V, 20A, ensures minimal power dissipation. The STGWT20H60DF features a standard input type and a TO-3P-3, SC-65-3 package suitable for through-hole mounting. It operates within a junction temperature range of -55°C to 175°C and is rated for a maximum power dissipation of 167W. Typical applications include industrial motor drives, power supplies, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 90 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 42.5ns/177ns |
| Switching Energy | 209µJ (on), 261µJ (off) |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 115 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 167 W |
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