STGWT15H60F
TRENCH GATE FIELD-STOP IGBT H SEManufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGWT15H60F is a Trench Gate Field-Stop Insulated Gate Bipolar Transistor (IGBT) from the H series. This component features a 600 V collector-emitter breakdown voltage and a maximum continuous collector current of 30 A, with a pulsed current capability of 60 A. The device exhibits a low on-state voltage of 2V at 15V Vge and 15A Ic, with a gate charge of 81 nC. Switching characteristics include turn-on delay of 24.5 ns and turn-off delay of 118 ns at 25°C, with switching energies of 136 µJ (on) and 207 µJ (off) under specified test conditions. With a maximum power dissipation of 115 W and an operating temperature range of -55°C to 175°C, this IGBT is suited for applications in power factor correction, motor drives, and industrial power supplies. The STGWT15H60F is supplied in a TO-3P package for through-hole mounting.
Additional Information
Series: HRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 15A |
| Supplier Device Package | TO-3P |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 24.5ns/118ns |
| Switching Energy | 136µJ (on), 207µJ (off) |
| Test Condition | 400V, 15A, 10Ohm, 15V |
| Gate Charge | 81 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 115 W |
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