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STGWS38IH130D

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STGWS38IH130D

IGBT 1300V 55A 180W TO247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGWS38IH130D is a PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This through-hole component features a collector-emitter breakdown voltage of 1300 V and a continuous collector current rating of 55 A, with a pulsed capability of 125 A (Icm). The IGBT exhibits a low on-state voltage (Vce(on)) of 2.8 V at 15 V gate-emitter voltage and 20 A collector current, with a specified turn-off delay (Td(off)) of 284 ns at 25°C, tested under 960 V, 20 A, 10 Ohm, 15 V conditions. Its maximum power dissipation is 180 W, and it operates across a temperature range of -55°C to 150°C. The STGWS38IH130D is housed in a TO-247-3 package. This device is suitable for use in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
Supplier Device PackageTO-247
IGBT Type-
Td (on/off) @ 25°C-/284ns
Switching Energy3.4mJ (off)
Test Condition960V, 20A, 10Ohm, 15V
Gate Charge127 nC
Current - Collector (Ic) (Max)55 A
Voltage - Collector Emitter Breakdown (Max)1300 V
Current - Collector Pulsed (Icm)125 A
Power - Max180 W

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