STGWA80H65DFB
IGBT BIPO 650V 80A TO247-3Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWA80H65DFB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 120 A, with a pulsed capability of 240 A. The STGWA80H65DFB features a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 80A collector current, facilitating efficient power transfer. With a maximum power dissipation of 469 W and a junction temperature range of -55°C to 175°C, it provides robust operation. Key switching characteristics include a gate charge of 414 nC and switching energies of 2.1 mJ (turn-on) and 1.5 mJ (turn-off) at a test condition of 400V, 80A, 10 Ohm, and 15V. The device is supplied in a TO-247-3 package with long leads, suitable for through-hole mounting. Its performance profile makes it suitable for use in industrial motor drives, power factor correction, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 85 ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
| Supplier Device Package | TO-247 Long Leads |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 84ns/280ns |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Gate Charge | 414 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 469 W |
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