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STGWA80H65DFB

IGBT BIPO 650V 80A TO247-3

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics STGWA80H65DFB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component offers a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 120 A, with a pulsed capability of 240 A. The STGWA80H65DFB features a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 80A collector current, facilitating efficient power transfer. With a maximum power dissipation of 469 W and a junction temperature range of -55°C to 175°C, it provides robust operation. Key switching characteristics include a gate charge of 414 nC and switching energies of 2.1 mJ (turn-on) and 1.5 mJ (turn-off) at a test condition of 400V, 80A, 10 Ohm, and 15V. The device is supplied in a TO-247-3 package with long leads, suitable for through-hole mounting. Its performance profile makes it suitable for use in industrial motor drives, power factor correction, and uninterruptible power supply (UPS) systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)85 ns
Vce(on) (Max) @ Vge, Ic2V @ 15V, 80A
Supplier Device PackageTO-247 Long Leads
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C84ns/280ns
Switching Energy2.1mJ (on), 1.5mJ (off)
Test Condition400V, 80A, 10Ohm, 15V
Gate Charge414 nC
Current - Collector (Ic) (Max)120 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)240 A
Power - Max469 W

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