STGWA60NC60WDR
IGBT 600V 130A 340W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWA60NC60WDR is a 600V, 130A Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ series. This device features a maximum power dissipation of 340W and a collector-emitter voltage (Vce(on)) of 2.6V at 15V gate-emitter voltage and 40A collector current. Key parameters include a gate charge of 195 nC and switching energies of 743µJ (on) and 560µJ (off) at 390V, 40A, 10 Ohm, and 15V. The STGWA60NC60WDR is packaged in a TO-247-3 with long leads, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C. This component is utilized in applications such as industrial motor drives and power factor correction.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 42 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 40A |
| Supplier Device Package | TO-247 Long Leads |
| IGBT Type | - |
| Td (on/off) @ 25°C | 40ns/240ns |
| Switching Energy | 743µJ (on), 560µJ (off) |
| Test Condition | 390V, 40A, 10Ohm, 15V |
| Gate Charge | 195 nC |
| Current - Collector (Ic) (Max) | 130 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 250 A |
| Power - Max | 340 W |
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