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STGWA30N120KD

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STGWA30N120KD

IGBT 1200V 60A 220W TO247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics STGWA30N120KD is a 1200V PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device features a collector current rating of 60A, with a pulsed capability of 100A, and a maximum power dissipation of 220W. The IGBT Type is standard, with a gate charge of 105 nC. Key switching parameters include a typical on-time of 36ns and off-time of 251ns at 25°C, with switching energies of 2.4mJ (on) and 4.3mJ (off) under test conditions of 960V, 20A, 10 Ohm, and 15V. The collector-emitter saturation voltage (Vce(on)) is a maximum of 3.85V at 15V gate-emitter voltage and 20A collector current. The component is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 125°C. This IGBT is frequently utilized in industrial motor drives, power factor correction, and uninterruptible power supplies.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 125°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)84 ns
Vce(on) (Max) @ Vge, Ic3.85V @ 15V, 20A
Supplier Device PackageTO-247
IGBT Type-
Td (on/off) @ 25°C36ns/251ns
Switching Energy2.4mJ (on), 4.3mJ (off)
Test Condition960V, 20A, 10Ohm, 15V
Gate Charge105 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)100 A
Power - Max220 W

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