STGWA30N120KD
IGBT 1200V 60A 220W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWA30N120KD is a 1200V PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This device features a collector current rating of 60A, with a pulsed capability of 100A, and a maximum power dissipation of 220W. The IGBT Type is standard, with a gate charge of 105 nC. Key switching parameters include a typical on-time of 36ns and off-time of 251ns at 25°C, with switching energies of 2.4mJ (on) and 4.3mJ (off) under test conditions of 960V, 20A, 10 Ohm, and 15V. The collector-emitter saturation voltage (Vce(on)) is a maximum of 3.85V at 15V gate-emitter voltage and 20A collector current. The component is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 125°C. This IGBT is frequently utilized in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 125°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 84 ns |
| Vce(on) (Max) @ Vge, Ic | 3.85V @ 15V, 20A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 36ns/251ns |
| Switching Energy | 2.4mJ (on), 4.3mJ (off) |
| Test Condition | 960V, 20A, 10Ohm, 15V |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 220 W |
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