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STGWA30H65FB

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STGWA30H65FB

IGBT

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

The STMicroelectronics STGWA30H65FB is a 650 V, 60 A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) from the HB series. This through-hole component, housed in a TO-247-3 package with long leads, offers a maximum power dissipation of 260 W. Key electrical parameters include a collector-emitter saturation voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 30A collector current. With a gate charge of 149 nC, its switching characteristics are defined by turn-on and turn-off delays of 37ns and 146ns respectively at 25°C, under test conditions of 400V, 30A, and 10 Ohm. Switching energy is specified at 151mJ (on) and 293mJ (off). This device operates across a temperature range of -55°C to 175°C (TJ) and is supplied in tube packaging. It finds application in power factor correction, induction heating, and power supply designs.

Additional Information

Series: HBRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Supplier Device PackageTO-247 Long Leads
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C37ns/146ns
Switching Energy151mJ (on), 293mJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge149 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)120 A
Power - Max260 W

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