The STMicroelectronics STGWA30H65FB is a 650 V, 60 A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) from the HB series. This through-hole component, housed in a TO-247-3 package with long leads, offers a maximum power dissipation of 260 W. Key electrical parameters include a collector-emitter saturation voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 30A collector current. With a gate charge of 149 nC, its switching characteristics are defined by turn-on and turn-off delays of 37ns and 146ns respectively at 25°C, under test conditions of 400V, 30A, and 10 Ohm. Switching energy is specified at 151mJ (on) and 293mJ (off). This device operates across a temperature range of -55°C to 175°C (TJ) and is supplied in tube packaging. It finds application in power factor correction, induction heating, and power supply designs.
Additional Information
Series: HBRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Supplier Device Package | TO-247 Long Leads |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 37ns/146ns |
| Switching Energy | 151mJ (on), 293mJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 149 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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