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STGWA25S120DF3

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STGWA25S120DF3

IGBT 1200V 25A TO247-3L

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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The STMicroelectronics STGWA25S120DF3 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current capability of 50 A, with a pulsed collector current of 100 A. The device offers a maximum power dissipation of 375 W and an on-state voltage drop of 2.1 V at 15 V gate-emitter voltage and 25 A collector current. Typical switching characteristics include a turn-on delay of 31 ns and a turn-off delay of 147 ns at 25°C, with a reverse recovery time of 265 ns. The switching energy is specified at 830 µJ (on) and 2.37 mJ (off) under the test condition of 600 V, 25 A, 15 Ohm, and 15 V. With a gate charge of 80 nC, this IGBT is suitable for demanding power switching applications across industries such as industrial motor drives, power supplies, and renewable energy systems. It is supplied in a TO-247-3 package and operates within an extended temperature range of -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)265 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 25A
Supplier Device PackageTO-247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C31ns/147ns
Switching Energy830µJ (on), 2.37mJ (off)
Test Condition600V, 25A, 15Ohm, 15V
Gate Charge80 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)100 A
Power - Max375 W

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