STGWA20IH65DF
TRENCH GATE FIELD-STOP 650 V, 20Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGWA20IH65DF is a 650V, 40A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) from the IH series. This through-hole component, packaged in a TO-247-3 with long leads, offers a maximum collector power dissipation of 159W and a peak collector current capability of 60A. Key electrical characteristics include a low Vce(on) of 2.05V at 15V, 20A, a gate charge of 56 nC, and switching energy of 110µJ (off) under test conditions of 400V, 20A, 22 Ohm, 15V. The device operates across a temperature range of -55°C to 175°C (TJ). This IGBT is commonly utilized in high-voltage power conversion applications within the industrial, automotive, and renewable energy sectors.
Additional Information
Series: IHRoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 20A |
| Supplier Device Package | TO-247 Long Leads |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/120ns |
| Switching Energy | 110µJ (off) |
| Test Condition | 400V, 20A, 22Ohm, 15V |
| Gate Charge | 56 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 159 W |
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