STGW80V60DF
IGBT TRENCH FS 600V 120A TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW80V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current of 120 A, with a pulsed current capability of 240 A. The IGBT type is Trench Field Stop, providing excellent performance characteristics. Key parameters include a maximum power dissipation of 469 W and a Vce(on) of 2.3 V at 15 V gate-emitter voltage and 80 A collector current. Gate charge is specified at 448 nC. The device features a reverse recovery time (trr) of 60 ns and switching energy figures of 1.8 mJ (on) and 1 mJ (off) under test conditions of 400V, 80A, 5Ohm, and 15V. Operating temperature ranges from -55°C to 175°C (TJ). The STGW80V60DF is supplied in a TO-247-3 exposed pad package, suitable for through-hole mounting. This IGBT finds application in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Exposed Pad |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 80A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 60ns/220ns |
| Switching Energy | 1.8mJ (on), 1mJ (off) |
| Test Condition | 400V, 80A, 5Ohm, 15V |
| Gate Charge | 448 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 469 W |
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