STGW80H65FB
IGBT 650V 120A 469W TO-247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW80H65FB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 120 A, with a pulsed capability of 240 A. Its low on-state voltage of 2 V at 15 V gate-emitter voltage and 80 A collector current, coupled with efficient switching characteristics of 2.1mJ (on) and 1.5mJ (off) at the specified test conditions (400V, 80A, 10 Ohm, 15V), make it suitable for demanding power conversion tasks. The STGW80H65FB offers a maximum power dissipation of 469 W and operates across a wide temperature range of -55°C to 175°C. Packaged in a TO-247-3 through-hole configuration, this device is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 84ns/280ns |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Gate Charge | 414 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 469 W |
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