STGW60H65F
IGBT 650V 120A 360W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGW60H65F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power applications. This device features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 120A, with a pulsed current rating of 240A. The IGBT Type is Trench Field Stop, and it offers a maximum power dissipation of 360W. Key electrical characteristics include a Vce(on) of 1.9V at 15V Gate-Emitter voltage and 60A collector current. Switching performance is characterized by a gate charge of 217 nC and switching energies of 750µJ (on) and 1.05mJ (off) under test conditions of 400V, 60A, 10 Ohm, and 15V. The STMicroelectronics STGW60H65F is packaged in a TO-247-3 through-hole configuration, suitable for applications in power supplies, motor drives, and industrial automation. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 65ns/180ns |
| Switching Energy | 750µJ (on), 1.05mJ (off) |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Gate Charge | 217 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 360 W |
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