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STGW60H65F

IGBT 650V 120A 360W TO247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

The STMicroelectronics STGW60H65F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power applications. This device features a 650V collector-emitter breakdown voltage and a continuous collector current capability of 120A, with a pulsed current rating of 240A. The IGBT Type is Trench Field Stop, and it offers a maximum power dissipation of 360W. Key electrical characteristics include a Vce(on) of 1.9V at 15V Gate-Emitter voltage and 60A collector current. Switching performance is characterized by a gate charge of 217 nC and switching energies of 750µJ (on) and 1.05mJ (off) under test conditions of 400V, 60A, 10 Ohm, and 15V. The STMicroelectronics STGW60H65F is packaged in a TO-247-3 through-hole configuration, suitable for applications in power supplies, motor drives, and industrial automation. Operating temperature ranges from -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 60A
Supplier Device PackageTO-247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C65ns/180ns
Switching Energy750µJ (on), 1.05mJ (off)
Test Condition400V, 60A, 10Ohm, 15V
Gate Charge217 nC
Current - Collector (Ic) (Max)120 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)240 A
Power - Max360 W

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