STGW60H65DRF
IGBT 650V 120A 420W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW60H65DRF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 650 V collector-emitter breakdown voltage and a continuous collector current rating of 120 A at a maximum junction temperature. The STGW60H65DRF exhibits a low on-state voltage (Vce(on)) of 2.4 V at 15 V gate-emitter voltage and 60 A collector current, ensuring minimal conduction losses. Its switching characteristics include a typical turn-on delay of 85 ns and turn-off delay of 178 ns at 25°C, with switching energies of 940 µJ (on) and 1.06 mJ (off) under specified test conditions. The device is housed in a TO-247-3 package, facilitating through-hole mounting and thermal management with a maximum power dissipation of 420 W. Operating temperature range is from -55°C to 175°C. This IGBT is suitable for use in motor drives, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 19 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 85ns/178ns |
| Switching Energy | 940µJ (on), 1.06mJ (off) |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Gate Charge | 217 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 420 W |
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