STGW60H65DF
IGBT 650V 120A 360W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGW60H65DF is a Trench Field Stop Insulated Gate Bipolar Transistor designed for high-efficiency power switching applications. This device features a 650 V collector-emitter breakdown voltage and a continuous collector current of 120 A, with a pulsed capability of 240 A. Key performance parameters include a low Vce(on) of 1.9 V at 15 V gate-source voltage and 60 A collector current, and switching times of 67 ns (turn-on) and 165 ns (turn-off) at 25°C. The component offers a maximum power dissipation of 360 W and a gate charge of 206 nC. Its TO-247-3 package facilitates through-hole mounting. The STGW60H65DF is suitable for use in industrial motor drives, power supplies, and electric vehicle applications requiring robust performance and thermal management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 62 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 60A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 67ns/165ns |
| Switching Energy | 1.5mJ (on), 1.1mJ (off) |
| Test Condition | 400V, 60A, 10Ohm, 15V |
| Gate Charge | 206 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 360 W |