STGW60H60DLFB
IGBT 600V 80A 375W TO-247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW60H60DLFB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current rating of 80A, with a pulsed current capability of 240A. The maximum power dissipation is 375W. Key parameters include a gate charge of 306 nC and a typical turn-off delay (Td(off)) of 160ns at 25°C, measured under a 400V, 60A, 5 Ohm, 15V test condition. The STGW60H60DLFB features a low on-state voltage of 2V at 15V gate-emitter voltage and 60A collector current. This device is housed in a TO-247 package suitable for through-hole mounting and operates across a wide temperature range from -55°C to 175°C (TJ). It is commonly utilized in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 60A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/160ns |
| Switching Energy | 626µJ (off) |
| Test Condition | 400V, 60A, 5Ohm, 15V |
| Gate Charge | 306 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 375 W |
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