STGW50HF60SD
IGBT 600V 110A 284W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW50HF60SD is a 600V, 110A Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-247-3 package, offers a maximum power dissipation of 284W. Key electrical characteristics include a collector-emitter voltage (Vce(on)) of 1.45V at 15V Vge and 30A Ic, and a collector current (Ic) of 110A, with a pulsed collector current (Icm) of 130A. The device exhibits a gate charge of 200 nC, with typical turn-on delay (Td(on)) of 50ns and turn-off delay (Td(off)) of 220ns at 25°C, tested under 400V, 30A, 10 Ohm, 15V conditions. Switching energy is specified at 250µJ for turn-on and 4.2mJ for turn-off. Operating temperature ranges from -55°C to 150°C. This component is suitable for use in power factor correction circuits, motor drives, and general power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 67 ns |
| Vce(on) (Max) @ Vge, Ic | 1.45V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/220ns |
| Switching Energy | 250µJ (on), 4.2mJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 130 A |
| Power - Max | 284 W |
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