STGW50HF60S
IGBT 600V 110A 284W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW50HF60S is a high-performance insulated gate bipolar transistor (IGBT) designed for demanding power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 110A, with a pulsed current rating of 130A. Its robust construction and 284W maximum power dissipation make it suitable for use in industrial motor drives, power factor correction circuits, and high-power inverters. The TO-247-3 package facilitates through-hole mounting and efficient heat dissipation. Key electrical characteristics include a Vce(on) of 1.45V at 15V gate-source voltage and 30A collector current. Switching performance is characterized by on-state switching energy of 250µJ and off-state switching energy of 4.2mJ, with typical turn-on delay of 50ns and turn-off delay of 220ns at 25°C under specified test conditions. The operating temperature range extends from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.45V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 50ns/220ns |
| Switching Energy | 250µJ (on), 4.2mJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 200 nC |
| Current - Collector (Ic) (Max) | 110 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 130 A |
| Power - Max | 284 W |
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