STGW50H60DF
IGBT 600V 100A 360W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW50H60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a collector-emitter voltage of 600 V and a continuous collector current rating of 100 A, with a pulsed capability of 200 A. The device offers a maximum power dissipation of 360 W and a low on-state voltage of 1.8 V at 15 V gate-emitter voltage and 50 A collector current. Key parameters include a gate charge of 217 nC, switching energies of 890 µJ (on) and 860 µJ (off) under test conditions of 400 V, 50 A, 10 Ohm, 15 V, and a reverse recovery time of 55 ns. The STGW50H60DF operates within an extended temperature range of -55°C to 150°C (TJ). It is supplied in a TO-247-3 package for through-hole mounting. This IGBT is suitable for use in high-power conversion systems, motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 62ns/178ns |
| Switching Energy | 890µJ (on), 860µJ (off) |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Gate Charge | 217 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 360 W |
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