STGW45NC60VD
IGBT 600V 90A 270W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW45NC60VD is a 600V, 90A insulated gate bipolar transistor (IGBT) from the PowerMESH™ series. This device features a standard input type and is housed in a TO-247-3 package with long leads, suitable for through-hole mounting. It offers a maximum power dissipation of 270W and a collector current of 90A, with a pulsed collector current capability of 220A. The on-state voltage drop (Vce(on)) is a maximum of 2.4V at 15V Vge and 30A Ic. Switching characteristics include a gate charge of 126 nC, a reverse recovery time of 45 ns, and switching energies of 333µJ (on) and 537µJ (off) under test conditions of 390V, 30A, 10 Ohm, and 15V. The operating temperature range is from -55°C to 150°C. This component is commonly utilized in industrial power applications.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 45 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Supplier Device Package | TO-247 Long Leads |
| IGBT Type | - |
| Td (on/off) @ 25°C | 33ns/178ns |
| Switching Energy | 333µJ (on), 537µJ (off) |
| Test Condition | 390V, 30A, 10Ohm, 15V |
| Gate Charge | 126 nC |
| Current - Collector (Ic) (Max) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 220 A |
| Power - Max | 270 W |
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