STGW40V60F
IGBT 600V 80A 283W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
Quality Control: Learn More
The STMicroelectronics STGW40V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) offering a 600 V collector-emitter breakdown voltage. This device features a continuous collector current rating of 80 A and a pulsed collector current of 160 A. With a maximum power dissipation of 283 W, it is designed for demanding applications. Key performance characteristics include a gate charge of 226 nC and low switching energy values of 456 µJ (on) and 411 µJ (off) at a test condition of 400 V, 40 A, 10 Ohm, 15 V. The on-state voltage drop (Vce(on)) is 2.3 V at 15 V gate-emitter voltage and 40 A collector current. Typical turn-on and turn-off delays are 52 ns and 208 ns respectively at 25°C. This IGBT is housed in a TO-247-3 package and operates over an extended temperature range of -55°C to 175°C (TJ). It is suitable for use in industrial power applications such as motor drives and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 52ns/208ns |
| Switching Energy | 456µJ (on), 411µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 226 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 283 W |
Request a Quote
Clients Also Buy
STGP8M120DF3
TRENCH GATE FIELD-STOP, 1200 V,
STGP10H60DF
IGBT TRENCH FS 600V 20A TO220
STGW40V60DF
IGBT TRENCH FS 600V 80A TO247-3
