STGW40NC60KD
IGBT 600V 70A 250W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGW40NC60KD is a 600V, 70A PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) packaged in a TO-247 with long leads for through-hole mounting. This device is rated for a maximum power dissipation of 250W and features a collector current of 70A, with a pulsed collector current capability of 220A. Key switching parameters include a gate charge of 135 nC, a typical turn-on delay of 46ns and turn-off delay of 164ns at 25°C, and a reverse recovery time of 45ns. The on-state voltage (Vce(on)) is a maximum of 2.7V at 15V gate-emitter voltage and 30A collector current. Switching energy is specified at 595µJ for turn-on and 716µJ for turn-off under test conditions of 480V, 30A, 10 Ohm, and 15V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in industrial power systems and motor control.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 45 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Supplier Device Package | TO-247 Long Leads |
| IGBT Type | - |
| Td (on/off) @ 25°C | 46ns/164ns |
| Switching Energy | 595µJ (on), 716µJ (off) |
| Test Condition | 480V, 30A, 10Ohm, 15V |
| Gate Charge | 135 nC |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 220 A |
| Power - Max | 250 W |
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