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STGW40N120KD

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STGW40N120KD

IGBT 1200V 80A 240W TO247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics STGW40N120KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ series. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current of 80 A, with a pulsed capability of 120 A. Key electrical parameters include a maximum on-state voltage (Vce(on)) of 3.85 V at 15 V gate-emitter voltage and 30 A collector current. The device features a gate charge of 126 nC and exhibits switching characteristics with turn-on delay (Td(on)) of 48 ns and turn-off delay (Td(off)) of 338 ns at 25°C, with switching energy of 3.7 mJ (on) and 5.7 mJ (off) under test conditions of 960 V, 30 A, 10 Ohm, and 15 V. It is housed in a TO-247-3 package with a through-hole mounting type and operates across a temperature range of -55°C to 125°C. This IGBT is suitable for applications in power factor correction, industrial motor drives, and uninterruptible power supplies.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 125°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)84 ns
Vce(on) (Max) @ Vge, Ic3.85V @ 15V, 30A
Supplier Device PackageTO-247-3
IGBT Type-
Td (on/off) @ 25°C48ns/338ns
Switching Energy3.7mJ (on), 5.7mJ (off)
Test Condition960V, 30A, 10Ohm, 15V
Gate Charge126 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)120 A
Power - Max240 W

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