STGW40N120KD
IGBT 1200V 80A 240W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW40N120KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ series. This component offers a 1200 V collector-emitter breakdown voltage and a continuous collector current of 80 A, with a pulsed capability of 120 A. Key electrical parameters include a maximum on-state voltage (Vce(on)) of 3.85 V at 15 V gate-emitter voltage and 30 A collector current. The device features a gate charge of 126 nC and exhibits switching characteristics with turn-on delay (Td(on)) of 48 ns and turn-off delay (Td(off)) of 338 ns at 25°C, with switching energy of 3.7 mJ (on) and 5.7 mJ (off) under test conditions of 960 V, 30 A, 10 Ohm, and 15 V. It is housed in a TO-247-3 package with a through-hole mounting type and operates across a temperature range of -55°C to 125°C. This IGBT is suitable for applications in power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 125°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 84 ns |
| Vce(on) (Max) @ Vge, Ic | 3.85V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 48ns/338ns |
| Switching Energy | 3.7mJ (on), 5.7mJ (off) |
| Test Condition | 960V, 30A, 10Ohm, 15V |
| Gate Charge | 126 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 240 W |
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