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STGW35NB60SD

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STGW35NB60SD

IGBT 600V 70A 200W TO247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGW35NB60SD, a PowerMESH™ series IGBT, offers a 600V collector-emitter breakdown voltage and a continuous collector current of 70A, with a pulsed capability of 250A. This through-hole component is housed in a TO-247-3 package, delivering a maximum power dissipation of 200W. Key parameters include a gate charge of 83nC and a collector-emitter saturation voltage (Vce(on)) of 1.7V at 15V gate drive and 20A. Switching characteristics are defined by a turn-on delay (Td(on)) of 92ns and turn-off delay (Td(off)) of 1.1µs, with a reverse recovery time (trr) of 44ns under specified test conditions (480V, 20A, 100O, 15V). This device is suitable for applications in industrial power supplies, motor control, and renewable energy systems. It operates within an ambient temperature range of -55°C to 150°C (TJ).

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)44 ns
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 20A
Supplier Device PackageTO-247-3
IGBT Type-
Td (on/off) @ 25°C92ns/1.1µs
Switching Energy840µJ (on), 7.4mJ (off)
Test Condition480V, 20A, 100Ohm, 15V
Gate Charge83 nC
Current - Collector (Ic) (Max)70 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)250 A
Power - Max200 W

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