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STGW35HF60WDI

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STGW35HF60WDI

IGBT 600V 60A 200W TO-247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGW35HF60WDI is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 200W. This component features a collector current (Ic) of 60A and a pulsed collector current (Icm) of 150A. The low on-state voltage (Vce(on)) is 2.5V at 15V gate-emitter voltage and 20A collector current. Gate charge is specified at 140 nC, with typical turn-on and turn-off delays of 30ns and 175ns respectively at 25°C. The reverse recovery time (trr) is 85ns. This IGBT is housed in a TO-247-3 package, designed for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). It is suitable for applications in industrial power supplies, motor drives, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)85 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Supplier Device PackageTO-247-3
IGBT Type-
Td (on/off) @ 25°C30ns/175ns
Switching Energy185µJ (off)
Test Condition390V, 20A, 10Ohm, 15V
Gate Charge140 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max200 W

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