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STGW30V60F

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STGW30V60F

IGBT 600V 60A 260W TO247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGW30V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 60 A, with a pulsed current rating of 120 A. The IGBT type is Trench Field Stop, offering optimized performance. It has a maximum power dissipation of 260 W and a low on-state voltage (Vce(on)) of 2.3 V at 15 V gate-emitter voltage and 30 A collector current. Switching characteristics include an on-state delay (Td(on)) of 45 ns and an off-state delay (Td(off)) of 189 ns at 25°C, with switching energy values of 383 µJ (on) and 233 µJ (off) under specified test conditions. The STGW30V60F is housed in a TO-247-3 package for through-hole mounting, suitable for demanding industrial and automotive power conversion systems. It operates reliably across a wide temperature range from -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 30A
Supplier Device PackageTO-247
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C45ns/189ns
Switching Energy383µJ (on), 233µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge163 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)120 A
Power - Max260 W

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