STGW30H60DLFB
IGBT HB 600V 30A HS TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW30H60DLFB is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding power conversion applications. This device offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 60A, with a pulsed current rating of 120A. It features a low on-state voltage (Vce(on)) of 2V at 15V gate-emitter voltage and 30A collector current, alongside a switching energy of 293µJ (off) under specified test conditions (400V, 30A, 10Ohm, 15V). The gate charge is 149nC, facilitating efficient switching. This IGBT is housed in a TO-247-3 package suitable for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. Its robust construction and performance characteristics make it suitable for motor drives, power supplies, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 30A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | -/146ns |
| Switching Energy | 293µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 149 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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