STGW30H60DF
IGBT 600V 60A 260W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW30H60DF is a 600V, 60A Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a maximum collector current of 60A and a pulsed collector current of 120A, with a maximum power dissipation of 260W. The Vce(on) is rated at 2.4V at 15V gate-emitter voltage and 30A collector current. Key switching characteristics include a gate charge of 105 nC and switching energies of 350µJ (on) and 400µJ (off) under test conditions of 400V, 30A, 10 Ohm, and 15V. The device operates within a temperature range of -40°C to 175°C (TJ) and is housed in a TO-247-3 package for through-hole mounting. This IGBT is suitable for demanding applications in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 110 ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Supplier Device Package | TO-247 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 50ns/160ns |
| Switching Energy | 350µJ (on), 400µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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