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STGW25S120DF3

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STGW25S120DF3

IGBT 1200V 25A TO247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGW25S120DF3 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 50 A at 25°C, with a pulsed capability of up to 100 A. The on-state voltage (Vce(on)) is a maximum of 2.1 V at 15 V gate-emitter voltage and 25 A collector current. With a maximum power dissipation of 375 W and a junction temperature range of -55°C to 175°C, it offers robust performance. Key switching characteristics include turn-on delay (Td(on)) of 31 ns and turn-off delay (Td(off)) of 147 ns at 25°C, with a reverse recovery time (trr) of 265 ns. The gate charge is 80 nC. This device is supplied in a TO-247-3 package for through-hole mounting. It finds application in power factor correction circuits, industrial motor drives, and uninterruptible power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)265 ns
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 25A
Supplier Device PackageTO-247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C31ns/147ns
Switching Energy830µJ (on), 2.37mJ (off)
Test Condition600V, 25A, 15Ohm, 15V
Gate Charge80 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)100 A
Power - Max375 W

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