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STGW20NB60KD

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STGW20NB60KD

IGBT 600V 50A 170W TO247

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGW20NB60KD is a 600V, 50A insulated gate bipolar transistor (IGBT) from the PowerMESH™ series. This device offers a maximum power dissipation of 170W and features a collector current of 50A, with a pulsed collector current capability of 100A. The on-state voltage drop (Vce(on)) is specified as 2.8V at 15V gate-emitter voltage and 20A collector current, under the test condition of 480V, 20A, 10 Ohm, and 15V. Switching characteristics include turn-on delay (Td(on)) of 39ns and turn-off delay (Td(off)) of 105ns at 25°C, with a reverse recovery time (trr) of 80.5ns. Gate charge is 85 nC. This IGBT is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. It finds application in high-power switching applications across various industrial sectors.

Additional Information

Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)80.5 ns
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
Supplier Device PackageTO-247-3
IGBT Type-
Td (on/off) @ 25°C39ns/105ns
Switching Energy675µJ (on), 500µJ (off)
Test Condition480V, 20A, 10Ohm, 15V
Gate Charge85 nC
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)100 A
Power - Max170 W

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