STGW20NB60KD
IGBT 600V 50A 170W TO247Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGW20NB60KD is a 600V, 50A insulated gate bipolar transistor (IGBT) from the PowerMESH™ series. This device offers a maximum power dissipation of 170W and features a collector current of 50A, with a pulsed collector current capability of 100A. The on-state voltage drop (Vce(on)) is specified as 2.8V at 15V gate-emitter voltage and 20A collector current, under the test condition of 480V, 20A, 10 Ohm, and 15V. Switching characteristics include turn-on delay (Td(on)) of 39ns and turn-off delay (Td(off)) of 105ns at 25°C, with a reverse recovery time (trr) of 80.5ns. Gate charge is 85 nC. This IGBT is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C. It finds application in high-power switching applications across various industrial sectors.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 80.5 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 39ns/105ns |
| Switching Energy | 675µJ (on), 500µJ (off) |
| Test Condition | 480V, 20A, 10Ohm, 15V |
| Gate Charge | 85 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 170 W |
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