STGP7NB60HD
IGBT 600V 14A 80W TO220Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGP7NB60HD is a PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 14 A, with a pulsed capability of 56 A. The IGBT exhibits a low on-state voltage (Vce(on)) of 2.8 V at 15 V gate-source voltage and 7 A collector current, ensuring efficient operation. With a maximum power dissipation of 80 W and an operating junction temperature of 150°C, it is suitable for demanding environments. Key switching characteristics include a typical turn-on delay of 15 ns and turn-off delay of 75 ns at 25°C, with a switching energy of 85 µJ (off) under specified test conditions. The STGP7NB60HD is provided in a TO-220-3 package for through-hole mounting. This component finds utility in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 100 ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 7A |
| Supplier Device Package | TO-220 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/75ns |
| Switching Energy | 85µJ (off) |
| Test Condition | 480V, 7A, 10Ohm, 15V |
| Gate Charge | 42 nC |
| Current - Collector (Ic) (Max) | 14 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 56 A |
| Power - Max | 80 W |
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