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STGP35HF60W

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STGP35HF60W

IGBT 600V 60A 200W TO220

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGP35HF60W is a 600 V, 60 A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This Through Hole component, packaged in a TO-220-3, offers a maximum power dissipation of 200 W and a continuous collector current of 60 A, with a pulsed capability of 150 A. Key performance metrics include a Vce(on) of 2.5V at 15V Vge and 20A Ic, a gate charge of 140 nC, and switching energies of 290µJ (on) and 185µJ (off) under specified test conditions. Operating across a wide temperature range of -55°C to 150°C, this device is suitable for demanding industrial sectors such as power supplies, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Supplier Device PackageTO-220
IGBT Type-
Td (on/off) @ 25°C30ns/175ns
Switching Energy290µJ (on), 185µJ (off)
Test Condition400V, 20A, 10Ohm, 15V
Gate Charge140 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max200 W

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