STGP30V60F
IGBT TRENCH FS 600V 60A TO220Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGP30V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 60A, with a pulsed current capability of 120A. The STGP30V60F offers a maximum power dissipation of 260W and a low on-state voltage (Vce(on)) of 2.3V at 15V gate-source voltage and 30A collector current. Its switching characteristics include a gate charge of 163 nC and switching energy values of 383µJ (turn-on) and 233µJ (turn-off) under specified test conditions. The IGBT is housed in a standard TO-220-3 package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for use in industrial and automotive power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-220 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/189ns |
| Switching Energy | 383µJ (on), 233µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 163 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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