STGP30V60DF
IGBT 600V 60A 258W TO220ABManufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGP30V60DF is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) offering a 600 V collector-emitter breakdown voltage. This component features a continuous collector current capability of 60 A, with a pulsed current rating of 120 A. Designed for through-hole mounting in a TO-220-3 package, it dissipates a maximum power of 258 W. Key performance parameters include a Vce(on) of 2.3 V at 15 V Vge and 30 A Ic, a gate charge of 163 nC, and switching energies of 383 µJ (on) and 233 µJ (off) under test conditions of 400 V, 30 A, 10 Ohm, and 15 V. The STGP30V60DF is suitable for applications in industrial motor drives, power factor correction, and uninterruptible power supplies. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 53 ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-220 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/189ns |
| Switching Energy | 383µJ (on), 233µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 163 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 258 W |
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