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STGP30IH65DF

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STGP30IH65DF

DISCRETE

Manufacturer: STMicroelectronics

Categories: Single IGBTs

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STMicroelectronics STGP30IH65DF is a discrete IGBT featuring Trench Field Stop technology. This component is rated for a collector-emitter breakdown voltage of 650 V and a continuous collector current of 60 A, with a pulsed current capability of 90 A. The STGP30IH65DF offers a maximum power dissipation of 180 W and a low on-state voltage (Vce(on)) of 2.05 V at 15 V gate-source voltage and 30 A collector current. Key parameters include a gate charge of 80 nC. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a through-hole TO-220-3 package. This IGBT is suitable for applications in industrial power supplies, motor control, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 30A
Supplier Device PackageTO-220
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C-
Switching Energy-
Test Condition400V, 30A, 22Ohm, 15V
Gate Charge80 nC
Current - Collector (Ic) (Max)60 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)90 A
Power - Max180 W

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