STGP30H65F
IGBT 650V 60A 260W TO-220ABManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGP30H65F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component offers a 650V collector-emitter breakdown voltage and a continuous collector current capability of 60A, with a pulsed capability of 120A. Featuring a maximum power dissipation of 260W, it is suitable for demanding industrial and automotive power systems. The STGP30H65F exhibits a low on-state voltage of 2.4V at 15V gate-emitter voltage and 30A collector current, with typical switching times of 50ns turn-on and 160ns turn-off under specified test conditions. The component is housed in a standard TO-220-3 package, facilitating through-hole mounting. Its operating temperature range extends from -55°C to 175°C (TJ). This device is commonly utilized in power factor correction, motor control, and uninterruptible power supply (UPS) inverter circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A |
| Supplier Device Package | TO-220 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 50ns/160ns |
| Switching Energy | 350µJ (on), 400µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 260 W |
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