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STGP20V60F

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STGP20V60F

IGBT 600V 40A 167W TO220AB

Manufacturer: STMicroelectronics

Categories: Single IGBTs

Quality Control: Learn More

STMicroelectronics STGP20V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 40A, with a pulsed current rating of 80A. The IGBT type utilizes Trench Field Stop technology for optimized performance, featuring a low on-state voltage (Vce(on)) of 2.2V at 15V gate-emitter voltage and 20A collector current. Key performance characteristics include a maximum power dissipation of 167W and a gate charge of 116 nC. Switching characteristics at 400V, 20A, 15V indicate turn-on delay (Td(on)) of 38ns and turn-off delay (Td(off)) of 149ns, with associated switching energies of 200µJ (on) and 130µJ (off). The STGP20V60F is housed in a TO-220-3 package suitable for through-hole mounting and operates within an extended temperature range of -55°C to 175°C. This device finds application in power factor correction, motor drives, and uninterruptible power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
Supplier Device PackageTO-220
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C38ns/149ns
Switching Energy200µJ (on), 130µJ (off)
Test Condition400V, 20A, 15V
Gate Charge116 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)80 A
Power - Max167 W

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