STGP19NC60H
IGBT 600V 40A 130W TO220Manufacturer: STMicroelectronics
Categories: Single IGBTs
Quality Control: Learn More
STMicroelectronics STGP19NC60H is a high-efficiency PowerMESH™ series Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current of 40A, with a pulsed capability of 60A. The STGP19NC60H features a maximum power dissipation of 130W and a low on-state voltage drop of 2.5V at 15V gate-emitter voltage and 12A collector current. Switching characteristics include typical on and off times of 25ns and 97ns respectively, with switching energies of 85µJ (on) and 189µJ (off) at the specified test conditions. The device is housed in a standard TO-220-3 through-hole package, suitable for mounting in various power electronic systems. Its robust design and performance parameters make it ideal for use in industrial motor control, power factor correction, and uninterruptible power supplies.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A |
| Supplier Device Package | TO-220 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 25ns/97ns |
| Switching Energy | 85µJ (on), 189µJ (off) |
| Test Condition | 390V, 12A, 10Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 130 W |
Request a Quote
Clients Also Buy
STGD3NB60SDT4
IGBT 600V 6A DPAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STGP7NC60HD
IGBT 600V 25A 80W TO220
