STGP15M120F3
TRENCH GATE FIELD-STOP, 1200 V,Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGP15M120F3 is a Trench Gate Field-Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component offers a collector-emitter voltage rating of 1200 V and a continuous collector current capability of 30 A, with a pulsed current capability (Icm) of 60 A. It features a maximum power dissipation of 259 W and a low collector-emitter saturation voltage (Vce(on)) of 2.3 V at 15 V gate-emitter voltage and 15 A collector current, under specific test conditions (600V, 15A, 22 Ohm, 15V). The device exhibits typical switching times of 26 ns turn-on and 122 ns turn-off at 25°C, with associated switching energies of 550 µJ (on) and 850 µJ (off). The STMicroelectronics STGP15M120F3 is housed in a TO-220-3 package for through-hole mounting and operates within a temperature range of -55°C to 175°C. This component is suitable for use in power factor correction circuits, motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 15A |
| Supplier Device Package | TO-220 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 26ns/122ns |
| Switching Energy | 550µJ (on), 850µJ (off) |
| Test Condition | 600V, 15A, 22Ohm, 15V |
| Gate Charge | 53 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 259 W |