STGP10NC60S
IGBT 600V 21A 62.5W TO220Manufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGP10NC60S from the PowerMESH™ series is a 600V, 21A Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 62.5W. This through-hole component, housed in a TO-220-3 package, features a collector current of 21A and a pulsed collector current of 25A. The gate charge is rated at 18 nC. The collector-emitter saturation voltage (Vce(on)) is a maximum of 1.65V at 15V Vge and 5A Ic. Switching characteristics include an on-state energy of 60µJ and an off-state energy of 340µJ, with typical turn-on delay (Td(on)) of 19ns and turn-off delay (Td(off)) of 160ns at 25°C, tested under 390V, 5A, 10 Ohm, 15V conditions. Operating temperature range is -55°C to 150°C (TJ). This device is suitable for applications in power supply, industrial motor control, and lighting.
Additional Information
Series: PowerMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 5A |
| Supplier Device Package | TO-220 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 19ns/160ns |
| Switching Energy | 60µJ (on), 340µJ (off) |
| Test Condition | 390V, 5A, 10Ohm, 15V |
| Gate Charge | 18 nC |
| Current - Collector (Ic) (Max) | 21 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 25 A |
| Power - Max | 62.5 W |
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