STGFW80V60F
IGBT 600V 120A 79W TO-3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGFW80V60F is a Trench Field Stop Insulated Gate Bipolar Transistor designed for power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 120A, with a pulsed current rating (Icm) of 240A. The STGFW80V60F exhibits a low on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 80A collector current. Its switching characteristics include typical turn-on delay (Td(on)) of 60ns and turn-off delay (Td(off)) of 220ns at 25°C, with switching energies of 1.8mJ (on) and 1mJ (off). The device operates within a junction temperature range of -55°C to 175°C and is housed in a TO-3PF package for through-hole mounting. Applications for this IGBT include industrial motor drives, uninterruptible power supplies (UPS), and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 80A |
| Supplier Device Package | TO-3PF |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 60ns/220ns |
| Switching Energy | 1.8mJ (on), 1mJ (off) |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Gate Charge | 448 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 79 W |
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