STGFW40V60F
IGBT 600V 80A 62.5W TO-3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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STMicroelectronics STGFW40V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 80 A, with a pulsed capability of 160 A. The STGFW40V60F offers a maximum power dissipation of 62.5 W and a low on-state voltage of 2.3 V at 40 A and 15 V gate-emitter voltage. Key switching parameters include a gate charge of 226 nC, with turn-on delay (Td(on)) of 52 ns and turn-off delay (Td(off)) of 208 ns at 25°C under specified test conditions. Switching energy is rated at 456 µJ (on) and 411 µJ (off). The IGBT is housed in a TO-3PF package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This device is utilized in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Supplier Device Package | TO-3PF |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 52ns/208ns |
| Switching Energy | 456µJ (on), 411µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 226 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 62.5 W |
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