STGFW30V60F
IGBT 600V 60A 58W TO3PFManufacturer: STMicroelectronics
Categories: Single IGBTs
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The STMicroelectronics STGFW30V60F is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 60A, with a pulsed current rating of 120A. The STGFW30V60F offers a maximum power dissipation of 58W and exhibits a typical on-state voltage (Vce(on)) of 2.3V at 15V gate-emitter voltage and 30A collector current. Switching characteristics include turn-on delay (Td(on)) of 45ns and turn-off delay (Td(off)) of 189ns at 25°C, with switching energy values of 383µJ (on) and 233µJ (off) under specified test conditions. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-3PF package for through-hole mounting. This IGBT is suitable for power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 30A |
| Supplier Device Package | TO-3PF |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 45ns/189ns |
| Switching Energy | 383µJ (on), 233µJ (off) |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Gate Charge | 163 nC |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 58 W |
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